Qorvo SiC FET and SiC MOSFET advantage are comparative
[introduction] manufacturer of numerous terminal product chooses to use SiC technology to replace silicon radical craft in succession, will develop be based on ambipolar knot transistor (BJT) , transistor of effect of knot bar field (JFET) , metallic oxide semiconductor field effect transistor (MOSFET) with insulation bar ambipolar transistor (IGBT) power source product. However, the SiC of Qorvo research and development ” in all source in all bar structure ” FET parts of an apparatus (if the graph is shown…